amplifiers - l ine a r & p ower - chip 3 3 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com HMC-ABH264 gaas phemt mmic medium power amplifier, 34 - 42 ghz v01.0209 general description features functional diagram the hm c-ab h 264 is a high dynamic range gaas phem t mmi c m edium p ower amplifer which operates between 34 and 42 g h z. the hm c-ab h 264 provides 18.5 db of gain, and an output power of 18 dbm at 1 db compression from a +5v supply. the hm c-ab h 264 amplifer can easily be integrated into m ulti-chip- m odules ( m c m s) due to its small size. this compact medium power amplifer die delivers consistent output power and excellent gain fatness across its rated bandwidth. all data is herein is measured with the chip in a 50 o hm test fxture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). h igh o utput ip 3: 29 dbm h igh p 1db: 18 dbm h igh gain: 18.5 db bias s upply: +5v 50 o hm m atched i nput/ o utput die s ize: 2.4 x 1.64 x 0.1 mm electrical specifcations, t a = +25 c, vd1 = vd2 = vdd = 5v, idd total = 120ma* typical applications the hm c-ab h 264 is ideal for: ? p oint-to- p oint r adios ? p oint-to- m ulti- p oint r adios ? v s at ? m ilitary & s pace p arameter m in. typ. m ax. m in. typ. m ax. units f requency r ange 34 - 40 40 - 42 g h z gain 16 18.5 16 18.5 db gain variation o ver temperature 0.018 0.022 db/ c i nput r eturn l oss 16 12 db o utput r eturn l oss 16 15 db o utput p ower for 1 db compression ( p 1db) 16.5 18 16 17 dbm s aturated o utput p ower ( p sat) 20.5 20.5 dbm o utput third o rder i ntercept ( ip 3) 29 27.5 dbm n oise f igure 6.5 6.5 db total s upply current ( i dd)(vdd = 5v, vgg = -0.45v typ.) 120 140 120 140 ma * adjust vgg between -2 to 0v to achieve idd = 120ma typical.
amplifiers - l ine a r & p ower - chip 3 3 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss vs. frequency gain vs. temperature output p1db vs. temperature psat vs. temperature HMC-ABH264 v01.0209 gaas phemt mmic medium power amplifier, 34 - 42 ghz -30 -20 -10 0 10 20 30 32 34 36 38 40 42 44 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 32 34 36 38 40 42 44 +25c +85c -55c return loss (db) frequency (ghz) -25 -20 -15 -10 -5 0 32 34 36 38 40 42 44 +25c +85c -55c return loss (db) frequency (ghz) 0 5 10 15 20 25 32 34 36 38 40 42 44 +25c +85c -55c gain (db) frequency (ghz) 15 17 19 21 23 25 34 36 38 40 42 44 +25c +85c -55c psat (dbm) frequency (ghz) 15 17 19 21 23 25 34 36 38 40 42 44 +25c +85c -55c p1db (dbm) frequency (ghz)
amplifiers - l ine a r & p ower - chip 3 3 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com power compression @ 36 ghz output ip3 vs. temperature noise figure vs. temperature gain & power vs. supply voltage @ 38 ghz, idd= 120ma reverse isolation vs. temperature power compression @ 40 ghz HMC-ABH264 v01.0209 gaas phemt mmic medium power amplifier, 34 - 42 ghz -50 -40 -30 -20 -10 0 32 34 36 38 40 42 44 +25c +85c -55c isolation (db) frequency (ghz) 23 25 27 29 31 33 35 34 36 38 40 42 44 +25c +85c -55c ip3 (dbm) frequency (ghz) 0 2 4 6 8 10 34 36 38 40 42 44 +25c +85c -55c noise figure (db) frequency (ghz) 0 5 10 15 20 25 4.5 5 5.5 gain(db) p1db(dbm) psat(dbm) gain (db), p1db (d bm), psat (dbm) vdd (v) 0 4 8 12 16 20 24 -18 -14 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 -18 -14 -10 -6 -2 2 6 10 14 pout (dbm) gain (db) pae (%) pout (dbm), gain (db), pae (%) input power (dbm)
amplifiers - l ine a r & p ower - chip 3 3 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) 5.5 v gate bias voltage (vgg) -1 to 0.3 vdc rf i nput p ower ( rfin )(vdd = +5vdc) +10 dbm channel temperature 180 c continuous p diss (t= 85 c) (derate 10.8 m w /c above 85 c) 1 w thermal r esistance (channel to die bottom) 93 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c vdd (v) i dd (ma) 4.0 114 4.5 117 5.0 120 note: amplifer will operate over full voltage ranges shown above. vgg adjusted to achieve idd= 120ma at +5v. typical supply current vs. vdd no t es : 1. a ll d imensions a re in in c hes [ mm ] 2. d ie t hi ck ness is .004 3. ty pi ca l b on d is .004 s qua re 4. back si d e me ta lli zat ion : g ol d 5. b on d p ad me ta lli zat ion : g ol d 6. back si d e me ta l is g ro u n d. 7. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . ele ct ros tat i c sensi t i v e d e v i c e o b ser v e han d lin g pre caut ions die packaging information [1] s tandard alternate g p -2 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC-ABH264 v01.0209 gaas phemt mmic medium power amplifier, 34 - 42 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com pad descriptions p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms 2 rfo ut this pad is ac coupled and matched to 50 o hms. 3, 5 vd2, 1 p ower s upply voltage for the amplifer. e xternal bypass capacitors of 100 p f and 0.01 f are required. 4, 6 vg2, 1 gate control for amplifer. adjust to achieve i dd of 120ma. p lease follow mmi c amplifer biasing p rocedure application n ote. e xternal bypass capacitors of 100 p f and 0.01 f are required. die bottom g n d die bottom must be connected to rf /dc ground. assembly diagram HMC-ABH264 v01.0209 gaas phemt mmic medium power amplifier, 34 - 42 ghz
amplifiers - l ine a r & p ower - chip 3 3 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d protec - tive containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. w irebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab HMC-ABH264 v01.0209 gaas phemt mmic medium power amplifier, 34 - 42 ghz
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